inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 5N90 description drain current i d = 5a@ t c =25 drain source voltage- : v dss = 900v(min) fast switching speed applications general purpose power amplifier absolute maximum ratings(t c =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 900 v v gs gate-source voltage 30 v i d drain current-continuous@ t c =25 5 a i d(puls) pulse drain current 12 a p tot total dissipation@t c =25 125 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 0.96 /w r th j-a thermal resistance, junction to ambient 62.5 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 5N90 electrical characteristics (t c =25 ) symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 250 a 900 v v gs (th ) gate threshold voltage v ds = v gs ; i d =250 a 2.0 4.0 v v sd diode forward on-voltage i s =5a ;v gs = 0 1.4 v r ds( on ) drain-source on-resistance v gs = 10v; i d =2.5a 2.8 i gss gate-body leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 900v; v gs = 0 10 a c iss input capacitance v ds =25v; v gs =0v; f t =1mhz 1200 1550 pf c rss reverse transfer capacitance 13 17 c oss output capacitance 110 145 t r rise time v gs =10v; i d =5a; v dd =450v; r g =25 65 140 ns t d(on) turn-on delay time 28 65 t f fall time 50 110 t d(off) turn-off delay time 65 140 pdf pdffactory pro www.fineprint.cn
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